EC > GATE 2014 SET-3 > MOSFET
The slope of the ID vs. VGS curve of an n-channel MOSFET in linear regime is 10−3 Ω−1 at VDS = 0.1 V. For the same device, neglecting channel length modulation, the slope of the √ID vs. VGS curve (in √A/V) under saturation regime is approximately _________.
Correct : 0.07
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