EC > GATE 2014 SET-3 > PN Junction
The donor and accepter impurities in an abrupt junction silicon diode are 1 × 1016 cm−3 and 5 × 1018 cm−3, respectively. Assume that the intrinsic carrier concentration in silicon ni = 1.5 × 1010 cm−3 at 300 K, kT/q = 26 mV and the permittivity of silicon εsi = 1.04 × 10−12 F/cm. The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are
Correct : d
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