EC > GATE 2014 SET-3 > Semiconductor Physics
At T = 300 K, the hole mobility of a semiconductor μp = 500 cm2/V-s and kT/q = 26 mV. The hole diffusion constant Dp in cm2/s is ________

Correct : 13

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semiconductor physics hole mobility GATE EC diffusion constant GATE hole diffusion constant GATE 2014 EC EC gate physics semiconductor physics gate hole diffusion GATE

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