EC > GATE 2014 SET-3 > Semiconductor Physics
A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to
A
the minority carrier mobility
B
the minority carrier recombination lifetime
C
the majority carrier concentration
D
the excess minority carrier concentration

Correct : d

Similar Questions

For non-degenerately doped n-type silicon, which one of the following plots represents the temperature (T) dependence of free electron concentration (n)?
#43 MCQ
The free electron concentration profile n(x) in a doped semiconductor at equilibrium is shown in the figure, where the points A, B, and C mark three different p...
#47 MSQ
A non-degenerate n-type semiconductor has 5% neutral dopant atoms. Its Fermi level is located at 0.25 eV below the conduction band (EC) and the donor energy le...
#84 Fill in the Blanks

Related Topics

No tags found

Unique Visitor Count

Total Unique Visitors

Loading......