EC > GATE 2014 SET-2 > Semiconductors
Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.
Correct : 4000
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