EC > GATE 2014 SET-2 > Semiconductors
A silicon bar is doped with donor impurities ND = 2.25 x 1015 atoms / cm3. Given the intrinsic carrier concentration of silicon at T = 300 K is ni = 1.5 x 1010 cm-3. Assuming complete impurity ionization, the equilibrium electron and hole concentrations are
A
n0 = 1.5 x 1016 cm-3, p0 = 1.5 x 105 cm-3
B
n0 = 1.5 x 1010 cm-3, p0 = 1.5 x 1015 cm-3
C
n0 = 2.25 x 1015 cm-3, p0 = 1.5 x 1010 cm-3
D
n0 = 2.25 x 1015 cm-3, p0 = 1 x 105 cm-3

Correct : d

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doped silicon semiconductor GATE EC 2014 intrinsic carrier concentration equilibrium concentrations n0 p0 silicon EC gate doping silicon semiconductor physics gate ionized impurities gate

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