EC > GATE 2014 SET-2 > Semiconductors
A silicon bar is doped with donor impurities ND = 2.25 x 1015 atoms / cm3. Given the intrinsic carrier concentration of silicon at T = 300 K is ni = 1.5 x 1010 cm-3. Assuming complete impurity ionization, the equilibrium electron and hole concentrations are
Correct : d
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