EC > GATE 2014 SET-1 > PN Junction
The doping concentrations on the p-side and n-side of a silicon diode are 1 × 1016 cm-3 and 1 × 1017 cm-3, respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon ni = 1.5 × 1010 cm-3 and kT/q = 26 mV. The electron concentration at the edge of the depletion region on the p-side is
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