EC > GATE 2013 SET-4 > MOSFET
The small-signal resistance (i.e., dVB/dID) in kΩ offered by the n-channel MOSFET M shown in the figure below, at a bias point of VB = 2 V is (device data for M: device transconductance parameter kN = μnCox(W/L) = 40 μA/V2, threshold voltage VTN = 1 V, and neglect body effect and channel length modulation effects)
Correct : b
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